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Journal of Physics: Conference Series
Volumn 34, Issue 1, 2006, Pages 511-515
The ICP etching technology of 3C-SiC films
Author keywords

[No Author keywords available]
Indexed keywords

EID: 33744515999     PISSN: 17426588     EISSN: 17426596     Source Type: Conference Proceeding    
DOI: 10.1088/1742-6596/34/1/084     Document Type: Article
Times cited : (7)
References (3)
  • 1
    • 0036820228 scopus 로고    scopus 로고
    • Relationships between Etch Rate and Roughness of Plasma Etched Surface
    • 10.1109/TPS.2002.807497 0093-3813
    • Byungwhan Kim and Byung-Teak Lee 2002 Relationships Between Etch Rate and Roughness of Plasma Etched Surface IEEE Trans. Plasma Sci. 30 2074-2077 No.5
    • (2002) IEEE Trans. Plasma Sci. , vol.30 , Issue.5 , pp. 2074-2077
    • Kim, B.1    Lee, B.2
  • 3
    • 4344560475 scopus 로고    scopus 로고
    • Magnetically Enhanced Inductively Coupled Plasma Etching of 6H-SiC
    • 10.1109/TPS.2004.828821 0093-3813
    • Kim D W, H Y Lee, S J Kyoung, etc 2004 Magnetically Enhanced Inductively Coupled Plasma Etching of 6H-SiC IEEE Trans. Plasma Sci. 32 1362-1366 No 3
    • (2004) IEEE Trans. Plasma Sci. , vol.32 , Issue.3 , pp. 1362-1366
    • Kim, D.W.1    Lee, H.Y.2    Kyoung, S.J.3

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.