High rate etching of 6H-SiC in SF6-based magnetically-enhanced inductively coupled plasmas

Thin Solid Films

Volumn 447-448, Issue , 2004, Pages 100-104

  Kim, D W ^a   Lee, H Y ^a   Park, B J ^a   Kim, H S ^a   Sung, Y J ^b   Chae, S H ^b   Ko, Y W ^c   Yeom, G Y ^a  

^a Sungkyunkwan University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

Author keywords

Etching; Magnetically enhanced ICP; OES; Silicon carbide; Sulfur hexafluoride

Indexed keywords

ANISOTROPY; COPPER COMPOUNDS; DEPOSITION; ELECTRIC POTENTIAL; EPITAXIAL GROWTH; ETCHING; INDUCTIVELY COUPLED PLASMA; MAGNETIC FIELD EFFECTS; PERMANENT MAGNETS; THERMAL CONDUCTIVITY; THERMODYNAMIC STABILITY;

BIAS VOLTAGES; MASK MATERIALS; OPTICAL EMISSION SPECTROSCOPY (OES);

SILICON CARBIDE;

EID: 1342281330     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2003.09.030     Document Type: Conference Paper

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