SiC via fabrication for wide-band-gap high electron mobility transistor/microwave monolithic integrated circuit devices

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 26, Issue 2, 2008, Pages 487-494

  Voss, L F ^a   Ip, K ^a   Pearton, S J ^a   Shul, R J ^b   Overberg, M E ^b   Baca, A G ^b   Sanchez, C ^b   Stevens, J ^b   Martinez, M ^b   Armendariz, M G ^b   Wouters, G A ^b  

^a University of Florida   (United States)

^b SANDIA NATIONAL LABORATORIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INDUCTIVELY COUPLED PLASMA ETCH; MICROWAVE MONOLITHIC INTEGRATED CIRCUITS (MMICS); PLASMA PARAMETERS; WAFER PLATEN;

ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; INDUCTIVELY COUPLED PLASMA; PLASMA ETCHING; PLATING;

MONOLITHIC INTEGRATED CIRCUITS;

EID: 41549122840     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2837849     Document Type: Article

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