3C-SiC heteroepitaxial growth by vapor-liquid-solid mechanism on patterned 4H-SiC substrate using Si-Ge melt

Crystal Growth and Design

Volumn 11, Issue 6, 2011, Pages 2177-2182

  Lorenzzi, J ^a   Lazar, M ^b   Tournier, D ^b   Jegenyes, N ^a   Carole, D ^a   Cauwet, F ^a   Ferro, G ^a  

^a UNIVERSITÉ CLAUDE BERNARD LYON 1   (France)

^b Univ Claude Bernard Lyon1   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DEPOSITS; DRY ETCHING; EPITAXIAL GROWTH; SILICON CARBIDE; SUBSTRATES;

4H-SIC SUBSTRATE; DRY ETCHING PROCESS; LATERAL ENLARGEMENTS; LATERAL GROWTH RATES; STANDARD PHOTOLITHOGRAPHY; TEMPERATURE RANGE; TWIN BOUNDARIES; VAPOR-LIQUID-SOLID MECHANISM;

SI-GE ALLOYS;

EID: 79957979328     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg101487g     Document Type: Article

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