Deep etching of silicon carbide for micromachining applications: Etch rates and etch mechanisms

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 19, Issue 4, 2001, Pages 1339-1345

  Chabert, P ^a  

^a ECOLE POLYTECHNIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; AUGER ELECTRON SPECTROSCOPY; DISSOCIATION; ELECTRIC FIELD EFFECTS; ELECTRIC REACTORS; FLUORESCENCE; LASER APPLICATIONS; MASKS; PRESSURE EFFECTS; REACTIVE ION ETCHING; SEMICONDUCTOR PLASMAS; SURFACE ROUGHNESS;

AUGER EMISSION SPECTRA; BIAS VOLTAGE; CAPACITIVELY COUPLED REACTOR; DEEP ETCHING; ELECTRON IMPACT DISSOCIATION; ETCH RATE; HELICON PLASMA; LASER INDUCED FLUORESCENCE; MICROMASKING; RADIOFREQUENCY POWER;

SILICON CARBIDE;

EID: 0035535265     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1387459     Document Type: Conference Paper

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