Factors that determine the optimum dose for sub-20nm resist systems: DUV, EUV, and e-beam options

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 8325, Issue , 2012, Pages

  Preil, Moshe ^a  

^a IBM MICROELECTRONICS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COST-BENEFIT TRADEOFFS; CRITICAL QUESTIONS; DIRECT WRITE; DUV RESIST; EXPOSURE TOOL; IMAGING PERFORMANCE; LOW DOSE; NOISE PROBLEMS; PILOT PRODUCTION; RESIST SYSTEMS; VOLUME PRODUCTION;

COMMERCE; COST EFFECTIVENESS; ELECTRON BEAM LITHOGRAPHY; PILOT PLANTS; SHOT NOISE;

THROUGHPUT;

EID: 84861068019     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.920024     Document Type: Conference Paper

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