Resist pattern prediction at EUV

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7636, Issue , 2010, Pages

  Biafore, John J ^a   Smith, Mark D ^a   Van Setten, Eelco ^b   Wallow, Tom ^c   Naulleau, Patrick ^d   Blankenship, David ^a   Robertson, Stewart A ^a   Deng, Yunfei ^c  

^a KLA Tencor Austin   (United States)

^b ASML   (Netherlands)

^c IBM MICROELECTRONICS   (United States)

^d LAWRENCE BERKELEY NATIONAL LABORATORY   (United States)

Author keywords

CD variability; EUV; EUV photoresist; LER; LWR; stochastic resist simulation

Indexed keywords

ACID GENERATION; ACID GENERATORS; CRITICAL STRUCTURES; EUV; EUV RESISTS; EXPERIMENTAL DATA; FLEXIBLE SIMULATION; GAIN INSIGHT; MODEL FIT; MOLECULE COUNTING; RESIST PATTERN; RESIST SIMULATION; SECONDARY ELECTRONS;

ACIDS; DATA STORAGE EQUIPMENT; ELECTRON ENERGY LOSS SPECTROSCOPY; MULTIPHOTON PROCESSES; PARTICLE DETECTORS; PHOTONS; PHOTORESISTS; STOCHASTIC SYSTEMS;

PHOTOIONIZATION;

EID: 77953387873     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846535     Document Type: Conference Paper

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