Recrystallization and reactivation of dopant atoms in ion-implanted silicon nanowires

ACS Nano

Volumn 6, Issue 4, 2012, Pages 3278-3283

  Fukata, Naoki ^a   Takiguchi, Ryo ^b   Ishida, Shinya ^b   Yokono, Shigeki ^b   Hishita, Shunichi ^a   Murakami, Kouichi ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

Author keywords

boron; implantation; phosphorus; silicon nanowires

Indexed keywords

CHEMICAL BONDING STATE; DOPANT ATOMS; ELECTRICAL ACTIVITIES; HIGH-DOSE IMPLANTATION; HIGH-TEMPERATURE ANNEALING; ION DOSE; ION-IMPLANTED SILICON; PHOSPHORUS ATOM; POLYCRYSTALLIZATION; SILICON NANOWIRES; SINGLE-CRYSTAL STRUCTURE;

BORON; CHEMICAL BONDS; ION IMPLANTATION; PHOSPHORUS; RECRYSTALLIZATION (METALLURGY);

NANOWIRES;

EID: 84860359570     PISSN: 19360851     EISSN: 1936086X     Source Type: Journal    
DOI: 10.1021/nn300189z     Document Type: Article

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