A Novel Method to Fabricate Silicon Nanowire p-n Junctions by a Combination of Ion Implantation and in-situ Doping

Nanoscale Research Letters

Volumn 5, Issue 1, 2010, Pages 243-246

  Kanungo, Pratyush Das ^a   Kögler, Reinhard ^b   Werner, Peter ^a   Gösele, Ulrich ^a   Skorupa, Wolfgang ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Electrical properties; In situ doping; Ion implantation; Nanowire; p n Junction

Indexed keywords

CARRIER RECOMBINATION; CONCENTRATION OF; ELECTRICAL MEASUREMENT; ELECTRICAL PROPERTY; HIGH RATE; IDEALITY FACTORS; IN-SITU; IN-SITU DOPING; NATIVE OXIDES; NOVEL METHODS; P-N JUNCTION; SILICON NANOWIRES; SURFACE STATE;

BORON; CRYSTAL GROWTH; ELECTRIC PROPERTIES; ION IMPLANTATION; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES; PHOSPHORUS; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

ELECTRIC WIRE;

EID: 77952888356     PISSN: 19317573     EISSN: 1556276X     Source Type: Journal    
DOI: 10.1007/s11671-009-9472-x     Document Type: Article

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