Characterization of structural changes associated with doping silicon nanowires by ion implantation

Crystal Growth and Design

Volumn 11, Issue 7, 2011, Pages 2690-2694

  Das Kanungo, Pratyush ^a   Koegler, Reinhard ^b   Zakharov, Nikolai ^a   Werner, Peter ^a   Scholz, Roland ^a   Skorupa, Wolfgang ^b  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; FREE SURFACES; HIGHER TEMPERATURES; POLYCRYSTALLINE; POLYCRYSTALLINE GRAINS; RANDOM NUCLEATION; SI (1 1 1); SILICON NANOWIRES; SINGLE-CRYSTALLINE; SINGLE-CRYSTALLINE STRUCTURES; SINGLE-STEP; SOLID PHASE EPITAXIAL REGROWTH; STRUCTURAL CHANGE; THERMAL ANNEALS;

ARSENIC; CRYSTALLINE MATERIALS; ELECTRIC PROPERTIES; ION IMPLANTATION; IONS; NANOWIRES; RAPID THERMAL ANNEALING; RECRYSTALLIZATION (METALLURGY);

ELECTRIC WIRE;

EID: 79960063533     PISSN: 15287483     EISSN: 15287505     Source Type: Journal    
DOI: 10.1021/cg200108u     Document Type: Article

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