Materials science: Encoding electronic properties by synthesis of axial modulation-doped silicon nanowires

Science

Volumn 310, Issue 5752, 2005, Pages 1304-1307

  Yang, Chen ^a   Zhong, Zhaohui ^a   Lieber, Charles M ^a,b  

^a HARVARD UNIVERSITY   (United States)

^b HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRONIC EQUIPMENT; LITHOGRAPHY; SEMICONDUCTOR QUANTUM DOTS; SYNTHESIS (CHEMICAL);

AXIAL ELONGATION; NANOMETERS; NANOWIRES; SCANNING GATE MICROSCOPY;

NANOSTRUCTURED MATERIALS;

CADMIUM; CARBON NANOTUBE; NANOPARTICLE; NANOWIRE; QUANTUM DOT; SELENIDE; SILICON;

NANOTECHNOLOGY;

ARTICLE; DIODE; ELECTRIC CONDUCTIVITY; ELECTRONICS; MICROSCOPY; NANOTECHNOLOGY; PRIORITY JOURNAL; SCANNING GATE MICROSCOPY; SEMICONDUCTOR; TRANSMISSION ELECTRON MICROSCOPY;

EID: 28144450590     PISSN: 00368075     EISSN: 10959203     Source Type: Journal    
DOI: 10.1126/science.1118798     Document Type: Article

References (27)

1. P. L. McEuen, M. S. Fuhrer, H. Park, IEEE Trans. Nanotechnology 1, 78 (2002).
2. H. Dai, Acc. Chem. Res. 35, 1035 (2002).
3. C. M. Lieber, Mater. Res. Soc. Bull. 28, 486 (2003).
4. L. Samuelson et al., Phys. E 25, 313 (2004).
5. T. Mokari, E. Rothenberg, I. Popov, R. Costi, U. Banin, Science 304, 1787 (2004).
6. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. C. Smith, C. M. Lieber, Nature 415, 617 (2002).
7. M. T. Bjork et al., Appl. Phys. Lett. 80, 1058 (2002).
8. M. T. Bjork et al., Nano Lett. 4, 1621 (2004).
9. C. Zhou, J. Kong, E. Yenilmez, H. Dai, Science 290, 1552 (2000).
10. V. Derycke, R. Martel, J. Appenzeller, Ph. Avouris, Nano Lett. 1, 453 (2001).
11. A. B. Greytak, L. J. Lauhon, M. S. Gudiksen, C. M. Lieber, Appl. Phys. Lett. 84, 4176 (2004).
12. L. J. Lauhon, M. S. Gudiksen, D. Wang, C. M. Lieber, Nature 420, 57 (2002).
13. Materials and methods are available as supporting material on Science Online.
14. J. M. Jasinski, S. M. Gates, Acc. Chem. Res. 24, 9 (1991).
15. R. T. White, R. L. Espino-Rios, D. S. Rogers, M. A. Ring, H. E. O'Neal, Int. J. Chem. Kinet. 17, 1029 (1985).
16. A. Bachtold et al., Phys. Rev. Lett. 84, 6082 (2000).
17. P. M. Fahey, P. B. Griffin, J. D. Plummer, Rev. Mod. Phys. 61, 289 (1989).
18. Y. Wu et al., Nano Lett. 4, 433 (2004).
19. Z. Zhong, D. Wang, Y. Cui, M. W. Bockrath, C. M. Lieber, Science 302, 1377 (2003).
20. A. DeHon, P. Lincoln, J. E. Savage, IEEE Trans. Nano-technology 2, 165 (2003).
21. L. P. Kouwenhoven et al., in Proceedings of Advanced Study Institute on Mesoscopic Electron Transport, L. L. Sohn, L. P. Kouwenhoven, G. Schön, Eds. (Kluwer, Dordecht, Netherlands, 1997).
22. Recent studies have demonstrated the formation of single quantum dots in InP/lnAs composition-modulated nanowires, where InP is used to produce confining barriers for an InAs QD (8).
23. F. R. Waugh et al., Phys. Rev. B 53, 1413 (1996).
24. 2/h, e is the elementary charge, and h is Planck's constant, assuming that interdot capacitance is negligible compared with individual QD capacitances (23).
25. N. Mason, M. J. Biercuk, C. M. Marcus, Science 303, 655 (2004).
26. C. Fasth, A. Fuhrer, M. T. Bjork, L. Samuelson, Nano Lett. 5, 1487 (2005).
27. We thank H. Park and A. DeHon for discussion. C.M.L acknowledges support of this work by the Defense Advanced Research Projects Agency.