Ex situ n and p doping of vertical epitaxialshort silicon nanowires by ionimplantation

Nanotechnology

Volumn 20, Issue 16, 2009, Pages

  Kanungo, Pratyush Das ^a   Kögler, Reinhard ^b   Nguyen Duc, Kien ^a   Zakharov, Nikolai ^a   Werner, Peter ^a   Gösele, Ulrich ^a  

^a MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING LEVELS; ELECTRICAL CONDUCTIVITIES; ELECTRICAL MEASUREMENTS; EX-SITU; FLUENCES; ION-IMPLANTATION; ORDERS OF MAGNITUDES; P TYPES; P-DOPING; RESIDUAL DEFECTS; ROOM TEMPERATURES; SCANNING ELECTRON MICROSCOPES; SI(111) SUBSTRATES; SILICON NANOWIRES; SURFACE DEPLETIONS;

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; ELECTRIC WIRE; MOLECULAR BEAMS; MOLECULAR DYNAMICS; NANOWIRES; RAPID THERMAL ANNEALING; RAPID THERMAL PROCESSING; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

SEMICONDUCTING SILICON COMPOUNDS;

ION; NANOMATERIAL; NANOWIRE; SILICON;

ARTICLE; CONTROLLED STUDY; DOPING; ELECTRIC CONDUCTIVITY; IMPLANTATION; MOLECULAR ELECTRONICS; PRIORITY JOURNAL; ROOM TEMPERATURE; SCANNING ELECTRON MICROSCOPY; TRANSMISSION ELECTRON MICROSCOPY;

EID: 65549128363     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/20/16/165706     Document Type: Article

References (28)

1. Cui Y and Lieber C M 2001 Science 291 851
2. Chen L J 2007 J. Mater. Chem. 17 4639
3. Zhao X, Wie C M, Yang L and Chou M Y 2004 Phys. Rev. Lett. 92 236805
4. Zhou X T, Hu J Q, Li C P, Ma D D D, Lee C S and Lee S T 2003 Chem. Phys. Lett. 369 220
5. Hofheinz M, Jehl X, Sanquer M, Molas G, Vinet M and Deleonibus S 2006 Appl. Phys. Lett. 89 143504
6. Tian B, Zheng X, Kempa T J, Fang Y, Yu N, Yu G, Huang J and Lieber C M 2007 Nature 449 885
7. Ziegler J F 1984 Inc. Ion Implantation Science and Technology (New York: Academic)
8. Gandhi S K 1994 VLSI Fabrication Principles 2nd edn (New York: Wiley)
9. Cui Y, Duan X, Hu J and Lieber C M 2000 J. Phys. Chem. B 104 5213
10. Lew K K, Pan L, Bogart T E, Dilts S M, Dickey E C, Redwinga J M, Wang Y, Cabassi M, Mayer T S and Novak S W 2004 Appl. Phys. Lett. 85 3101
11. Zheng G, Lu W, Jin S and Lieber C M 2004 Adv. Mater. 16 1890
12. Lauhon L J, Gudiksen M S, Wang D and Lieber C M 2002 Nature 420 57
13. Tutuc E, Appenzeller J, Reuter C M and Guha S 2006 Nano Lett. 6 2070
14. Li N, Tan T Y and Gösele U 2008 Appl. Phys. A 90 591
15. Colli A, Fasoli A, Ronning C, Pisana S, Piscanec S and Ferrari C A 2008 Nano Lett. 8 2188
16. Bauer J, Fleischer F, Breitenstein O, Schubert L, Werner P, Gösele U and Zacharias M 2007 Appl. Phys. Lett. 90 012105
17. Zakharov N D, Werner P, Sokolov L and Gösele U 2007 Physica E 37 148
18. Werner P, Zakharov N D, Gerth G, Schubert L and Gösele U 2006 Int. J. Mater. Res. 97 1008
19. Sze S M 1981 Physics of Semiconductor Devices 2nd edn (New York: Wiley)
20. Wang D and Wang W 1987 J. Electron. (China) 4 39
21. www.srim.org
22. Das Kanungo P, Zakharov N, Bauer J, Breitenstein O, Werner P and Goesele U 2008 Appl. Phys. Lett. 92 263107
23. Li D, Wu Y, Kim P, Shi L, Yang P and Majumdar A 2003 Appl. Phys. Lett. 83 2934
24. Fernndez-Serra M V, Adessi Ch and Blasé X 2006 Phys. Rev. Lett. 96 166805
25. Solmi S and Selvidori M 1988 Solid State Phenom. 2 65
26. Angelucci R, Negrini P and Solmi S 1986 Appl. Phys. Lett. 49 1468
27. Oehrlein G S, Cohen S A and Sedgwick T O 1984 Appl. Phys. Lett. 45 417
28. Clément N, Tonneau D, Dallaportaa H, Bouchiat V, Fraboulet D, Mariole D, Gautier J and Safarov V 2002 Physica E 13 999