Codoping of boron and phosphorus in silicon nanowires synthesized by laser ablation

Applied Physics Letters

Volumn 93, Issue 20, 2008, Pages

  Fukata, N ^a,c   Mitome, M ^a   Bando, Y ^a   Seoka, M ^b   Matsushita, S ^b   Murakami, K ^b   Chen, J ^a   Sekiguchi, T ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b UNIVERSITY OF TSUKUBA   (Japan)

^c JAPAN SCIENCE AND TECHNOLOGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ABLATION; ATOMIC PHYSICS; ATOMS; BORON; BORON COMPOUNDS; ELECTRIC WIRE; LASER ABLATION; LASER APPLICATIONS; LASERS; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; PHOSPHORUS; PULSED LASER DEPOSITION; SEMICONDUCTING SILICON COMPOUNDS; SILICON;

CO DOPED; CODOPING; CONDUCTION ELECTRONS; HEAVY B DOPING; LOCAL VIBRATIONAL MODES; P DONORS; RESONANCE SIGNALS; SILICON NANOWIRES; SYNTHESIS OF;

NONMETALS;

EID: 56849113037     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3033226     Document Type: Article

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