Numerical simulation of blue InGaN light-emitting diodes with polarization-matched AlGaInN electron-blocking layer and barrier layer

Optics Communications

Volumn 282, Issue 21, 2009, Pages 4252-4255

  Kuo, Yen Kuang ^a   Tsai, Miao Chan ^a   Yen, Sheng Horng ^b  

^a NATIONAL CHANGHUA UNIVERSITY OF EDUCATION   (Taiwan)

^b EPISTAR CORPORATION   (Taiwan)

Author keywords

Light emitting diode; Numerical simulation; Piezoelectric effect

Indexed keywords

ACTIVE REGIONS; ALGAINN; BARRIER LAYERS; BLOCKING LAYERS; HOLE WAVE FUNCTIONS; NUMERICAL SIMULATION; OPTICAL PERFORMANCE; PIEZOELECTRIC EFFECT; POLARIZATION EFFECT; QUANTUM WELL; SIMULATION RESULT; SPECTRAL RANGE;

COMPUTER SIMULATION; CURRENT DENSITY; DIODES; ELECTRONS; LIGHT EMISSION; LIGHT EMITTING DIODES; MATHEMATICAL MODELS; OPTICAL DEVICES; PIEZOELECTRIC TRANSDUCERS; PIEZOELECTRICITY; POLARIZATION;

INTEGRATED OPTOELECTRONICS;

EID: 69849110997     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2009.07.036     Document Type: Article

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