Novel UV devices on high-quality AlGaN using grooved underlying layer

Journal of Crystal Growth

Volumn 311, Issue 10, 2009, Pages 2860-2863

  Tsuzuki, Hirotoshi ^a   Mori, Fumiaki ^a   Takeda, Kenichiro ^a   Iwaya, Motoaki ^a   Kamiyama, Satoshi ^a   Amano, Hiroshi ^a   Akasaki, Isamu ^a   Yoshida, Harumasa ^b   Kuwabara, Masakazu ^b   Yamashita, Yoji ^b   Kan, Hirofumi ^b  

^a MEIJO UNIVERSITY   (Japan)

^b CENTRAL RESEARCH LABORATORY   (Japan)

Author keywords

A3. Metalorganic vapor phase epitaxy; B1. Nitrides; B2. Gallium compounds; B2. Semiconducting III V materials; B3. Laser diodes; B3. Light emitting diodes

Indexed keywords

A3. METALORGANIC VAPOR PHASE EPITAXY; B1. NITRIDES; B2. GALLIUM COMPOUNDS; B2. SEMICONDUCTING III-V MATERIALS; B3. LASER DIODES; B3. LIGHT-EMITTING DIODES;

ALUMINUM; CORUNDUM; CRYSTAL GROWTH; CURRENT DENSITY; GALLIUM COMPOUNDS; LASERS; LIGHT EMISSION; LIGHT EMITTING DIODES; METALLORGANIC VAPOR PHASE EPITAXY; NITRIDES; PULSED LASER APPLICATIONS; VAPORS;

DIODES;

EID: 65749086886     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2009.01.031     Document Type: Article

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