Nitride band-structure model in a quantum well laser simulator

Optical and Quantum Electronics

Volumn 40, Issue 5-6, 2008, Pages 295-299

  Venkatachalam, Anusha ^a   Yoder, P D ^a   Klein, Benjamin ^a   Kulkarni, Aditya ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Built in polarization; InGaN; K.p; Nitrides; Quantum well

Indexed keywords

BUILT-IN POLARIZATION; INGAN; K.P; QUANTUM WELL;

COMPUTER SIMULATION; LASERS; NITRIDES; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM WELLS; SEMICONDUCTOR QUANTUM WIRES; SIMULATORS;

QUANTUM WELL LASERS;

EID: 53149084156     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-008-9199-4     Document Type: Conference Paper

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