Lateral carrier confinement and threshold current reduction in InGaN QW lasers with deeply etched mesa

Optical and Quantum Electronics

Volumn 42, Issue 11-13, 2011, Pages 747-754

  Satter, Md Mahbub ^a   Yoder, Paul Douglas ^a  

^a GEORGIA INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Deeply etched mesa; Edge emitting laser diode; Sidewall passivation; Surface recombination velocity

Indexed keywords

ACTIVE LAYER; CARRIER CONFINEMENTS; DEEPLY ETCHED MESA; EDGE EMITTING LASER DIODE; ETCH DEPTH; EXPERIMENTAL STUDIES; INGAN QW; LATERAL DIFFUSION; MQW LASERS; OPTICAL INTENSITIES; SIDEWALL PASSIVATION; SIMULATION RESULT; SURFACE PASSIVATION; SURFACE RECOMBINATION VELOCITIES; SURFACE RECOMBINATION VELOCITY; THRESHOLD CURRENTS;

GALLIUM NITRIDE; OPTICAL GAIN; PASSIVATION; SEMICONDUCTOR QUANTUM WELLS;

QUANTUM WELL LASERS;

EID: 80755132236     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-011-9471-x     Document Type: Conference Paper

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