InGaN MQW violet laser diode performance with quaternary AlInGaN blocking layer

Optics Communications

Volumn 282, Issue 24, 2009, Pages 4755-4758

  Abdullah, Rafid A ^a   Ibrahim, Kamarulazizi ^a  

^a SCHOOL OF PHYSICS   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAINN; ALGAN; ALINGAN; BLOCKING LAYERS; ISE TCAD; LASER DIODES; MOLE FRACTION; OPTICAL INTENSITIES; OUTPUT POWER; SIMULATION RESULT; TEMPERATURE CHARACTERISTIC; THRESHOLD CURRENTS; VIOLET LASER DIODES;

COMPUTER SOFTWARE; FIBER OPTIC SENSORS; GALLIUM; LASERS;

DIODES;

EID: 70350501163     PISSN: 00304018     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.optcom.2009.08.060     Document Type: Article

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