Structure optimisation of short-wavelength ridge-waveguide InGaN/GaN diode lasers

Opto-Electronics Review

Volumn 16, Issue 1, 2008, Pages 27-33

  Karbownik, P ^a   Sarzala R P ^a  

^a LODZ UNIVERSITY OF TECHNOLOGY   (Poland)

Author keywords

405 nm lasers; InGaN GaN diode laser; Simulation of a diode laser operation

Indexed keywords

CONTINUOUS WAVE LASERS; DIODES; ETCHING; GALLIUM NITRIDE; III-V SEMICONDUCTORS; RIDGE WAVEGUIDES; SEMICONDUCTOR QUANTUM WELLS; STRUCTURAL OPTIMIZATION;

CONTINUOUS-WAVE OPERATIONS; INGAN/GAN; INGAN/GAN QUANTUM WELL; MOUNTING CONFIGURATIONS; ROOM TEMPERATURE LASING; SELF-CONSISTENT SIMULATIONS; SIMULATION OF A DIODE LASER OPERATION; STRUCTURE OPTIMISATION;

QUANTUM WELL LASERS;

EID: 38149059889     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: 10.2478/s11772-007-0035-3     Document Type: Conference Paper

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