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Volumn 56, Issue 12, 2009, Pages 3207-3211

Square-gate AlGaN/GaN HEMTs with improved trap-related characteristics

Author keywords

High electron mobility transistor (HEMT); Layout; Power semiconductor devices

Indexed keywords

ALGAN/GAN HEMTS; ALGAN/GAN HIGH ELECTRON-MOBILITY TRANSISTORS; CHANNEL AREA; CURRENT COLLAPSE; EXCELLENT PERFORMANCE; FLICKER NOISE; GATE LAG; GATE LEAKAGES; HIGH ELECTRON MOBILITY TRANSISTOR (HEMT); LAYOUT; MESA ETCHING; MULTI-FINGER LAYOUTS; POWER SEMICONDUCTOR DEVICES; TRAPPING EFFECTS;

EID: 84859916766     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2032282     Document Type: Article
Times cited : (16)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.