Low-κ BCB passivation on AlGaN-GaN HEMT fabrication

IEEE Electron Device Letters

Volumn 25, Issue 12, 2004, Pages 763-765

  Wang, Wen Kai ^a   Lin, Ching Huao ^a   Lin, Po Chen ^a   Lin, Cheng Kuo ^a   Huang, Fan Hsiu ^a   Chan, Yi Jen ^a   Chen, Guan Ting ^a   Chyi, Jen Inn ^a  

^a NATIONAL CENTRAL UNIVERSITY   (Taiwan)

Author keywords

Benzocyclobutene (BCB) passivation; GaN HEMT; Reliability

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; GALLIUM NITRIDE; PASSIVATION; PERMITTIVITY; PHOTORESISTS; RELIABILITY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON NITRIDE;

BENZOCYCLOBUTENE PASSIVATION; STRESS-INDUCED POLARIZATION;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 10644280083     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.838322     Document Type: Article

References (8)

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