Effect of Al composition and gate recess on power performance of AlGaN/ GaN high-electron mobility transistors

IEEE Electron Device Letters

Volumn 29, Issue 4, 2008, Pages 300-302

  Pei, Yi ^a   Chu, R ^a   Shen, L ^a   Fichtenbaum, N A ^a   Chen, Z ^a   Brown, D ^a   Keller, S ^a   Denbaars, S P ^a   Mishra, U K ^a  

^a University of California   (United States)

Author keywords

Al composition; Gallium nitride; Gate recess; High electron mobility transistor (HEMT); Power

Indexed keywords

SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR JUNCTIONS; TWO DIMENSIONAL ELECTRON GAS;

GATE LEAKAGE; GATE RECESS; POWER DENSITY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 41749121932     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.917936     Document Type: Article

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