Plasma-etching-enhanced deep centers in n-GaN grown by metalorganic chemical-vapor deposition

Applied Physics Letters

Volumn 82, Issue 10, 2003, Pages 1562-1564

  Fang, Z Q ^a   Look, D C ^a   Wang, X L ^b   Han, Jung ^b   Khan, F A ^c   Adesida, I ^c  

^a WRIGHT STATE UNIVERSITY   (United States)

^b Yale University   (United States)

^c University of Illinois at Urbana Champaign   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC POTENTIAL; ELECTRON IRRADIATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PLASMA APPLICATIONS; REACTIVE ION ETCHING; SEMICONDUCTOR DOPING;

PROGRAMMABLE ELECTROMETERS;

GALLIUM NITRIDE;

EID: 0037429818     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1560562     Document Type: Article

References (16)

1. A. P. Zhang, G. T. Dang, F. Ren, X. A. Cao, H. Cho, E. S. Lambers, S. J. Pearton, R. J. Shul, L. Zhang, A. G. Baca, R. Hickman, and J. M. Van Hove, J. Electrochem. Soc. 147, 719 (2000).
2. X. A. Cao, A. P. Zhang, G. T. Dang, F. Ren, S. J. Pearton, R. J. Shul, and L. Zhang, J. Vac. Sci. Technol. A 18, 1144 (2000).
3. F. A. Khan, L. Zhou, V. Kumar, and I. Adesida, J. Vac. Sci. Technol. B 19, 2926 (2001).
4. Z.-Q. Fang, D. C. Look, and L. Polenta, J. Phys.: Condens. Matter 14, 13061 (2002).
5. Z.-Q. Fang, L. Polenta, J. W. Hemsky, and D. C. Look, in the 2000 International Semiconducting and Insulating Materials Conference (SIMC-XI), Canberra, edited by C. Jagadish and N. J. Welham (IEEE, Piscataway, NJ, 2001), p. 35.
6. D. C. Look and Z.-Q. Fang, Appl. Phys. Lett. 79, 84 (2001).
7. T. Wosinski, J. Appl. Phys. 65, 1566 (1989).
8. P. Hacke, T. Detchprohm, K. Hiramatsu, N. Sawaki, K. Tadatomo, and K. Miyake, J. Appl. Phys. 76, 304 (1994).
9. W. K. Götz, J. Walker, L. T. Romano, N. M. Johnson, and R. J. Molnar, Mater. Res. Soc. Symp. Proc. 449, 525 (1997).
10. Z.-Q. Fang, D. C. Look, J. Jasinski, M. Benamara, Z. Liliental-Weber, and R. J. Molnar, Appl. Phys. Lett. 78, 332 (2001).
11. Z.-Q. Fang, J. W. Hemsky, D. C. Look, and M. P. Mack, Appl. Phys. Lett. 72, 448 (1998).
12. F. D. Auret, S. A. Goodman, F. K. Koschnick, J.-M. Spaeth, B. Beaumont, and P. Gibart, Appl. Phys. Lett. 73, 3745 (1998).
13. H. K. Cho, K. S. Kim, C.-H. Hong, and H. J. Lee, J. Cryst. Growth 223, 38 (2001).
14. C. D. Wang, L. S. Yu, S. S. Lau, E. T. Yu, W. Kim, A. E. Botchkarev, and H. Morkoç, Appl. Phys. Lett. 72, 1211 (1998).
15. Z.-Q. Fang, D. C. Look, W. Kim, Z. Fan. A. Botchkarev, and H. Morkoç, Appl. Phys. Lett. 72, 2277 (1998).
16. L. Polenta, Z.-Q. Fang, and D. C. Look, Appl. Phys. Lett. 76, 2086 (2000).