Polyimide passivated AlGaN-GaN HFETs with 7.65 W/mm at 18 GHz

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 238-240

  Hampson, Mark D ^a   Shen, Shyh Chiang ^a   Schwindt, Randal S ^a   Price, R Kirk ^a   Chowdhury, Uttiya ^a   Wong, Michael M ^b   Gang Zhu, Ting ^b   Yoo, Dongwon ^b   Dupuis, Russell D ^b   Feng, Milton ^a  

^a University of Illinois at Urbana Champaign   (United States)

^b The University of Texas at Austin   (United States)

Author keywords

Delta doping; Gallium nitride; Heterojunction field effect transistor (HFET); High electron mobility transistor (HEMT); Polyimide

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; POLYIMIDES; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DOPING;

DELTA DOPING; HETEROJUNCTION FIELD EFFECT TRANSISTOR;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 2442602489     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.826565     Document Type: Letter

References (9)

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