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Volumn 7, Issue 11, 2011, Pages 1552-1556

Complementary-like graphene logic gates controlled by electrostatic doping

(6) Li, Song Lin a,b Miyazaki, Hisao a,b Lee, Michael V a,b Liu, Chuan a,b Kanda, Akinobu b,c Tsukagoshi, Kazuhito a,b

a NATIONAL INSTITUTE FOR MATERIALS SCIENCE (Japan)

b JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

c UNIVERSITY OF TSUKUBA (Japan)

Author keywords

bandgap; field effect transistors; graphene; logic gates; nanoelectronics

Indexed keywords

AMBIPOLAR; BAND GAPS; CHARGE NEUTRALITY; ELECTROSTATIC MODULATION; GRAPHENE TRANSISTORS; LOGIC COMPUTATION; NAND GATE;

ELECTROSTATICS; FIELD EFFECT TRANSISTORS; GRAPHENE; LOGIC CIRCUITS; LOGIC GATES; SWITCHING CIRCUITS;

COMPUTATION THEORY;

GRAPHITE; SILICON DIOXIDE;

ARTICLE; CHEMISTRY; ELECTRICITY; SEMICONDUCTOR; STATIC ELECTRICITY;

ELECTRICITY; GRAPHITE; SILICON DIOXIDE; STATIC ELECTRICITY; TRANSISTORS, ELECTRONIC;

EID: 79957999081 PISSN: 16136810 EISSN: 16136829 Source Type: Journal
DOI: 10.1002/smll.201100318 Document Type: Article

Times cited : (50)

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