A large-signal graphene FET model

IEEE Transactions on Electron Devices

Volumn 59, Issue 4, 2012, Pages 968-975

  Habibpour, Omid ^a   Vukusic, Josip ^a   Stake, Jan ^a  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

Author keywords

Graphene; harmonic balance analysis; microwave field effect transistors (FETs); semiconductor device modeling; subharmonic mixer

Indexed keywords

ACCURATE ESTIMATION; ANALYSIS AND DESIGN; EXTRACTION METHOD; FITTING PARAMETERS; GATE BIAS DEPENDENCE; HARMONIC BALANCE; HARMONIC BALANCE ANALYSIS; LARGE-SIGNALS; LOAD-PULL; MICROWAVE FIELD-EFFECT TRANSISTORS (FETS); MODEL VALIDITY; OPERATING CONDITION; S-PARAMETER MEASUREMENTS; SEMI-EMPIRICAL; SEMICONDUCTOR DEVICE MODELING; SUB-HARMONIC MIXER; SUBHARMONICS; THIRD HARMONIC;

DC POWER TRANSMISSION; GRAPHENE; MESFET DEVICES; MIXERS (MACHINERY); SCATTERING PARAMETERS;

COMPUTER SIMULATION;

EID: 84859210010     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2012.2182675     Document Type: Article

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