Understanding asymmetric transportation behavior in graphene field-effect transistors using scanning kelvin probe microscopy

IEEE Electron Device Letters

Volumn 32, Issue 2, 2011, Pages 128-130

  Liu, W J ^a   Yu, H Y ^a   Xu, S H ^a   Zhang, Q ^a   Zou, X ^b   Wang, J L ^b   Pey, K L ^a   Wei, J ^c   Zhu, H L ^d   Li, M F ^e  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^b NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

^c SINGAPORE INSTITUTE OF MANUFACTURING TECHNOLOGY   (Singapore)

^d INSTITUTE OF MICROELECTRONICS   (China)

^e FUDAN UNIVERSITY   (China)

Author keywords

Asymmetric transport; field effect transistors (FETs); graphene; scanning Kelvin probe microscopy (SKPM)

Indexed keywords

ASYMMETRIC BEHAVIORS; ASYMMETRIC TRANSPORT; ELECTRON TRANSPORTATION; GRAPHENES; SCANNING KELVIN PROBE MICROSCOPY; SCANNING KELVIN PROBE MICROSCOPY (SKPM); SINGLE LAYER; SOURCE/DRAIN JUNCTIONS; WORK-FUNCTION DIFFERENCE;

GRAPHENE; MESFET DEVICES; PALLADIUM; PROBES; SCANNING;

FIELD EFFECT TRANSISTORS;

EID: 79151472671     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2010.2093500     Document Type: Article

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