Asymmetrical nonlinear HFET/MESFET model suitable for intermodulation analysis of amplifiers and resistive mixers

IEEE Transactions on Microwave Theory and Techniques

Volumn 48, Issue 1, 2000, Pages 15-22

  Yhland, Klas ^a   Rorsman, Niklas ^b   Garcia, Mikael ^a   Merkel, Harald F ^b  

^a CHALMERS UNIVERSITY OF TECHNOLOGY   (Sweden)

^b Advanced Device Center   (United States)

Author keywords

MESFET'S; Modeling; Modfet's

Indexed keywords

HETEROJUNCTION FIELD EFFECT TRANSISTORS; INTERMODULATION DISTORTION; MODULATION DOPED FIELD EFFECT TRANSISTORS; NONLINEAR MODELING;

CURRENT VOLTAGE CHARACTERISTICS; EQUIVALENT CIRCUITS; FREQUENCIES; HETEROJUNCTIONS; INTERMODULATION MEASUREMENT; MATHEMATICAL MODELS; MICROWAVE AMPLIFIERS; MIXER CIRCUITS; REFLECTION; SIGNAL DISTORTION;

MESFET DEVICES;

EID: 0033875104     PISSN: 00189480     EISSN: None     Source Type: Journal    
DOI: 10.1109/22.817467     Document Type: Article

References (15)

1. J. C. Pedro and J. Perez, "Accurate simulation of GaAs MESFET's intermodulation distortion using a new drain-source current model," IEEE Trans. Microwave Theory Tech., vol. 42, pp. 25-33, Jan. 1994.
2. S. Peng, P. J. McCleer, and G. I. Haddad, "Nonlinear models for the intermodulation analysis of FET mixers," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 1037-1045, May 1995.
3. S. A. Maas and D. Neilson, "Modeling MESFET's for intermodulation analysis of mixers and amplifiers," IEEE Trans. Microwave Theory Tech., vol. 38, pp. 1964-1971, Dec. 1990.
4. I. Angelov, H. Zirath, and N. Rorsman, "A new empirical nonlinear model for HEMT and MESFET devices," IEEE Trans. Microwave Theory Tech., vol. 40, pp. 2258-2266, Dec. 1992.
5. I. Angelov, H. Zirath, and N. Rorsman, "Validation of a nonlinear transistor model by power spectrum characteristics of HEMT's and MESFET's," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 1046-1052, May 1995.
6. S. Peng, P. J. McCleer, and G. I. Haddad, "Intermodulation analysis of FET resistive mixers using Volterra series," in IEEE MTT-S Int. Microwave Symp. Dig., San Franscisco, CA, 1996, pp. 1377-1380.
7. R. S. Virk and S. A. Maas, "Modeling MESFET's for intermodulation analysis of resistive FET mixers," in IEEE MTT-S Int. Microwave Symp. Dig., Orlando, FL, 1995, pp. 1247-1250.
8. K. Yhland, "En Ny HFET Model," Dept. Microwave Technol., Chalmers Univ. Technol., Gothenborg, Sweden, Int. Rep. CCHA 4-97, Jan. 1997.
9. J. A. Garcia, A. M. Sanchez, J. C. Pedro, N. B. De Carvalho, A. T. Puente, and J. L. Garcia, "Characterizing the gate-to-source nonlinear capacitor role on GaAs FET IMD performance," IEEE Trans. Microwave Theory Tech., vol. 46, pp. 2344-2355, Dec. 1998.
10. K. Yhland, N. Rorsman, and H. H. G. Zirath, "Novel single device balanced resistive HEMT mixers," IEEE Trans. Microwave Theory Tech., vol. 43, pp. 2863-2867, Dec. 1995.
11. H. Rohdin and P. Roblin, "MODFET DC model with improved pinchoff and saturation characteristics," IEEE Trans. Electron Devices, vol. ED-2, no. 67, pp. 664-672, Mar. 1986.
12. N. Rorsman, "Heterostructure field-effect transistors and millimeter wave integrated circuits," Ph.D. dissertation, Dept. Microwave Technol., Chalmers Univ., Gothenborg, Sweden, May 1995.
13. G. Dambrine, A. Cappy, F. Heliodore, and E. Playez, "A new method for determining the FET small-signal equivalent circuit," IEEE Trans. Microwave Theory Tech., vol. 36, pp. 1151-1159, July 1988.
14. N. Rorsman, M. Garcia, C. Karlsson, and H. Zirath, "Accurate smallsignal modeling of HFET's for millimeter-wave applications," IEEE Trans. Microwave Theory Tech., vol. 44, pp. 432-437, Mar. 1996.
15. M. Garcia, K. Yhland, H. Zirath, I. Angelov, and N. Rorsman, "Fast, automatic and accurate HFET small-signal characterization," Microwave J., vol. 40, pp. 102-117, July 1997.