Temperature-dependent ballistic transport in a channel with length below the scattering-limited mean free path

Journal of Applied Physics

Volumn 111, Issue 5, 2012, Pages

  Arora, Vijay K ^a,b   Zainal Abidin, Mastura Shafinaz ^b   Tan, Michael L P ^b   Riyadi, Munawar A ^b,c  

^a WILKES UNIVERSITY   (United States)

^b UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^c DIPONEGORO UNIVERSITY   (Indonesia)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; BALLISTIC TRANSPORTS; CRITICAL VOLTAGES; CRYOGENIC TEMPERATURES; EXPERIMENTAL DATA; HIGH ELECTRIC FIELDS; HIGH TEMPERATURE; HIGH-FIELD; IN-CHANNELS; MEAN FREE PATH; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTOR; MOBILITY DEGRADATION; NON EQUILIBRIUM; STOCHASTIC VELOCITY; TEMPERATURE DEPENDENT; WIDE SPECTRUM;

ELECTRIC FIELDS; MOSFET DEVICES; NANOWIRES; SCATTERING; TRANSPORT PROPERTIES;

BALLISTICS;

EID: 84858995954     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3688339     Document Type: Article

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