Concentration dependence of drift and magnetoresistance ballistic mobility in a scaled-down metal-oxide semiconductor field-effect transistor

Applied Physics Letters

Volumn 99, Issue 6, 2011, Pages

  Arora, Vijay K ^a,b   Shafinaz Zainal Abidin, Mastura ^b   Tembhurne, Saurabh ^b,c   Riyadi, Munawar A ^b,d  

^a WILKES UNIVERSITY   (United States)

^b UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^c INDIAN INSTITUTE OF TECHNOLOGY BOMBAY   (India)

^d DIPONEGORO UNIVERSITY   (Indonesia)

Author keywords

[No Author keywords available]

Indexed keywords

CONCENTRATION DEPENDENCE; DRIFT MOBILITIES; EXPERIMENTAL DATA; INJECTED CARRIERS; MEAN FREE PATH; METAL OXIDE SEMICONDUCTOR; NONSTATIONARY;

BALLISTICS; ELECTRIC RESISTANCE; FIELD EFFECT TRANSISTORS; MAGNETOELECTRONICS; MAGNETORESISTANCE;

TRANSISTORS;

EID: 84860389656     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3621885     Document Type: Article

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