The channel mobility degradation in a nanoscale metal-oxide-semiconductor field effect transistor due to injection from the ballistic contacts

Journal of Applied Physics

Volumn 109, Issue 5, 2011, Pages

  Riyadi, Munawar A ^a,b   Arora, Vijay K ^a,c  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b DIPONEGORO UNIVERSITY   (Indonesia)

^c WILKES UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BALLISTICITY; CHANNEL MOBILITY; INJECTION VELOCITY; MEAN FREE PATH; MOBILITY DEGRADATION; MONTE CARLO PROCEDURES; NANOSCALE METALS; NONSTATIONARY; SOURCE AND DRAINS;

BALLISTICS; DEGRADATION; ELECTRIC FIELDS; FIELD EFFECT TRANSISTORS; POWER QUALITY; WATER INJECTION;

FREE FLIGHT;

EID: 79953004156     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3554623     Document Type: Article

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