The drain velocity overshoot in an 80 nm metal-oxide-semiconductor field-effect transistor

Journal of Applied Physics

Volumn 105, Issue 7, 2009, Pages

  Tan, Michael L P ^a,c   Arora, Vijay K ^b,c   Saad, Ismail ^c   Taghi Ahmadi, Mohammad ^c   Ismail, Razali ^c  

^a UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^b WILKES UNIVERSITY   (United States)

^c UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

Author keywords

[No Author keywords available]

Indexed keywords

ARTIFICIAL PARAMETERS; BALLISTIC TRANSPORTS; CHANNEL CONDUCTIONS; DRAIN VOLTAGES; EXPERIMENTAL DATUM; HIGH ELECTRIC FIELDS; INTRINSIC VELOCITIES; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; MOS FETS; QUASI SATURATIONS; SATURATION VALUES; SATURATION VELOCITIES; VELOCITY OVERSHOOT; VELOCITY VECTORS;

BALLISTICS; CARRIER CONCENTRATION; DIELECTRIC DEVICES; DRAIN CURRENT; ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; FIELD EFFECT TRANSISTORS; MOSFET DEVICES; SEMICONDUCTOR MATERIALS; TRANSPORT PROPERTIES;

VELOCITY;

EID: 65249100083     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3091278     Document Type: Article

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