Mobility limiting scattering mechanisms in nitride-based two-dimensional heterostructures with the InGaN channel

Semiconductor Science and Technology

Volumn 25, Issue 4, 2010, Pages

  Gokden S ^a   Tulek R ^a   Teke, A ^a   Leach, J H ^b   Fan, Q ^b   Xie, J ^b   Ozgur U ^b   Morkoc H ^b   Lisesivdin, S B ^c,d   Ozbay E ^c  

^a BALIKESIR UNIVERSITY   (Turkey)

^b Virginia Commonwealth University   (United States)

^c BILKENT UNIVERSITY   (Turkey)

^d GAZI UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; ALLOY DISORDER; BARRIER LAYERS; CHANNEL LAYERS; HETEROSTRUCTURES; INTERFACE ROUGHNESS; INTERFACE ROUGHNESS SCATTERING; INTERMEDIATE TEMPERATURES; INTRINSIC SCATTERING; IONIZED IMPURITIES; OPTICAL PHONONS; ROOM TEMPERATURE; SCATTERING MECHANISMS; SCATTERING PROCESS; SHEET CARRIER DENSITIES; TEMPERATURE DEPENDENT; TEMPERATURE RANGE; TWO-DIMENSIONAL ELECTRON GAS (2DEG);

CARRIER CONCENTRATION; ELECTRON GAS; ELECTRON MOBILITY; ELECTRONS; GALLIUM ALLOYS; GALLIUM NITRIDE; HALL EFFECT; HIGH ELECTRON MOBILITY TRANSISTORS; INTERFACES (MATERIALS); IONIZATION OF GASES; MAGNETIC FIELD EFFECTS; PHONONS; SINGLE CRYSTALS; TWO DIMENSIONAL; TWO DIMENSIONAL ELECTRON GAS;

ACOUSTIC WAVE SCATTERING;

EID: 77951062822     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/4/045024     Document Type: Article

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