Scattering-limited and ballistic transport in a nano-CMOS circuit

Microelectronics Journal

Volumn 40, Issue 3, 2009, Pages 581-583

  Saad, Ismail ^a,b   Tan, Michael L P ^b,c   Lee, Aaron C E ^b   Ismail, Razali ^b   Arora, Vijay K ^b,d  

^a UNIVERSITI MALAYSIA SABAH   (Malaysia)

^b UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

^d WILKES UNIVERSITY   (United States)

Author keywords

Ballistic mobility; Nano MOSFET; Quantum confinement; Saturation velocity

Indexed keywords

BALLISTICS; CHARGE COUPLED DEVICES; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC FIELDS; ELECTRON BEAM LITHOGRAPHY; FIELD EFFECT TRANSISTORS; METALLIC COMPOUNDS; MOS DEVICES; QUANTUM CONFINEMENT; ULSI CIRCUITS; VELOCITY;

BALLISTIC TRANSPORTS; CARRIER VELOCITIES; CHANNEL MOBILITIES; EXPERIMENTAL OBSERVATIONS; MEAN FREE PATHS; NANO MOSFET; NANO-CMOS; NANO-SCALE METALS; SATURATION VELOCITY;

MOSFET DEVICES;

EID: 61349138761     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2008.06.049     Document Type: Article

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