The role of ballistic mobility and saturation velocity in performance evaluation of a nano-CMOS circuit

2009 International Conference on Emerging Trends in Electronic and Photonic Devices and Systems, ELECTRO '09

Volumn , Issue , 2009, Pages 14-17

  Arora, Vijay K ^a,b   Chek, Desmond C Y ^b   Tan, Michael L P ^b,c  

^a WILKES UNIVERSITY   (United States)

^b UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

45 nm CMOS; 80 nm CMOS; Ballistic transport; Device modeling; Intrinsic velocity; Parameter extraction

Indexed keywords

BALLISTICS; CMOS INTEGRATED CIRCUITS; DRAIN CURRENT; ELECTRIC FIELDS; PARAMETER EXTRACTION; PHOTONIC DEVICES; TIMING CIRCUITS;

BALLISTIC TRANSPORTS; CURRENT SATURATION; DEVICE MODELING; INTRINSIC VELOCITY; NANO CMOS CIRCUITS; NANOSCALE CIRCUITS; SATURATION VELOCITY; SCATTERING INTERACTIONS;

VELOCITY;

EID: 77952563491     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/electro.2009.5441185     Document Type: Conference Paper

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