Transition of equilibrium stochastic to unidirectional velocity vectors in a nanowire subjected to a towering electric field

Journal of Applied Physics

Volumn 108, Issue 11, 2010, Pages

  Arora, Vijay K ^a,b   Chek, Desmond C Y ^a   Tan, Michael L P ^a,c   Hashim, Abdul Manaf ^a  

^a UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^b WILKES UNIVERSITY   (United States)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ASYMMETRIC DISTRIBUTION; DRIFT VELOCITIES; FERMI VELOCITIES; FERMI-DIRAC DISTRIBUTION; HIGH ELECTRIC FIELDS; MEAN FREE PATH; QUANTUM STATE; SATURATION VELOCITY; STOCHASTIC VELOCITY; VELOCITY VECTORS; VELOCITY-FIELD CHARACTERISTICS;

ELECTRIC FIELDS; ELECTRIC WIRE; NANOWIRES; STOCHASTIC SYSTEMS;

VELOCITY;

EID: 78751492247     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3514128     Document Type: Article

References (45)

1. V. K. Arora, Phys. Rev. B 0556-2805 23, 5611 (1981). 10.1103/PhysRevB.23. 5611
2. M. Abul Khayer and R. K. Lake, J. Appl. Phys. 0021-8979 107, 014502 (2010). 10.1063/1.3275502
3. Y. Lee, K. Kakushima, K. Shiraishi, K. Natori, and H. Iwai, J. Appl. Phys. 0021-8979 107, 113705 (2010). 10.1063/1.3388324
4. R. Kim, S. Datta, and M. S. Lundstrom, J. Appl. Phys. 0021-8979 105, 034506 (2009). 10.1063/1.3074347
5. P. Yang, R. Yan, and M. Fardy, Nano Lett. 1530-6984 10, 1529 (2010). 10.1021/nl100665r
6. S. A. Dayeh, Semicond. Sci. Technol. 0268-1242 25, 024004 (2010). 10.1088/0268-1242/25/2/024004
7. V. K. Arora, Curr. Nanosci. 1573-4137 5, 227 (2009). 10.2174/ 157341309788185488
8. E. Gnani, A. Gnudi, S. Reggiani, and G. Baccarani, IEEE Trans. Electron Devices 0018-9383 57, 336 (2010). 10.1109/TED.2009.2035545
9. R. Kim and M. S. Lundstrom, IEEE Trans. Electron Devices 0018-9383 56, 132 (2009). 10.1109/TED.2008.2008368
10. H. Sakaki, Jpn. J. Appl. Phys., Part 2 0021-4922 28, L314 (1989). 10.1143/JJAP.28.L314
11. H. Sakaki, J. I. Motohisa, and K. Hirakawa, IEEE Trans. Electron Devices 0018-9383 9, 133 (1988). 10.1109/55.2066
12. H. Sakaki, Jpn. J. Appl. Phys. 0021-4922 19, L735 (1980). 10.1143/JJAP.19.L735
13. V. K. Arora, Phys. Rev. B 0556-2805 30, 7297 (1984). 10.1103/PhysRevB.30. 7297
14. V. K. Arora, M. L. P. Tan, I. Saad, and R. Ismail, Appl. Phys. Lett. 0003-6951 91, 103510 (2007). 10.1063/1.2780058 (Pubitemid 47379081)
15. V. K. Arora, Jpn. J. Appl. Phys., Part 1 0021-4922 24, 537 (1985). 10.1143/JJAP.24.537
16. G. Samudra, S. J. Chua, A. K. Ghatak, and V. K. Arora, J. Appl. Phys. 0021-8979 72, 4700 (1992). 10.1063/1.352075
17. H. Sakaki, Tech. Dig.-Int. Electron Devices Meet. 0163-1918 2007, 9. 10.1109/IEDM.2007.4418851
18. M. T. Ahmadi, M. L. P. Tan, R. Ismail, and V. K. Arora, Int. J. Nanotechnol. 1475-7435 6, 601 (2009). 10.1504/IJNT.2009.025299
19. V. K. Arora, J. Phys. C 0022-3719 18, 3011 (1985). 10.1088/0022-3719/18/ 15/011
20. V. K. Arora and M. Prasad, Phys. Status Solidi B 0370-1972 117, 127 (1983). 10.1002/pssb.2221170113
21. V. K. Arora, Proceedings of the International Conference on the Physics of Semiconductors, San Francisco, CA, 6-10 August (Springer, NY, 1985), pp. 1461-1464.
22. H. N. Spector and V. K. Arora, Surf. Sci. 0039-6028 159, 425 (1985). 10.1016/0039-6028(85)90438-8
23. J. Lee, H. N. Spector, and V. K. Arora, Appl. Phys. Lett. 0003-6951 42, 363 (1983). 10.1063/1.93941
24. J. Lee, H. N. Spector, and V. K. Arora, J. Appl. Phys. 0021-8979 54, 6995 (1983). 10.1063/1.331963 (Pubitemid 14507142)
25. I. Saad, M. L. P. Tan, I. H. Hii, R. Ismail, and V. K. Arora, Microelectron. J. 0026-2692 40, 540 (2009). 10.1016/j.mejo.2008.06.046
26. M. Lundstrom and J. Guo, Nanoscale Transistors: Device Physics, Modeling and Simulation (Springer, New York, 2006).
27. V. K. Arora, Proceedings of IEEE International Conference on Software Engineering 2002, 2002.
28. V. K. Arora, Proceedings of the International Workshop on the Physics of Semiconductor Devices, New Delhi, 11-16 December (Society for Semiconductor Devices, New Delhi, 2002).
29. V. K. Arora, J. Appl. Phys. 0021-8979 54, 824 (1983). 10.1063/1.332042 (Pubitemid 13525428)
30. V. K. Arora and H. N. Spector, Superlattices Microstruct. 0749-6036 1, 251 (1985). 10.1016/0749-6036(85)90012-6 (Pubitemid 16568539)
31. K. K. Thornber, J. Appl. Phys. 0021-8979 51, 2127 (1980). 10.1063/1.327885 (Pubitemid 11430903)
32. W. T. Masselink, T. S. Henderson, J. Klem, W. F. Kopp, and H. Morkoc, IEEE Trans. Electron Devices 0018-9383 33, 639 (1986). 10.1109/T-ED.1986.22545
33. D. L. Scharfetter and H. K. Gummel, IEEE Trans. Electron Devices 0018-9383 16, 64 (1969). 10.1109/T-ED.1969.16566
34. W. Shockley, Bell Syst. Tech. J. 0005-8580 30, 990 (1951).
35. E. J. R. W. Shockley, Phys. Rev. B 0556-2805 81, 139 (1951).
36. E. Conwell, High Field Transport in Semiconductors (Academic, New York, 1967).
37. N. Ahmad and V. K. Arora, IEEE Trans. Electron Devices 0018-9383 33, 1075 (1986). 10.1109/T-ED.1986.22616
38. V. Choudhry and V. K. Arora, Electron. Lett. 0013-5194 22, 271 (1986). 10.1049/el:19860186
39. M. L. P. Tan, V. K. Arora, I. Saad, M. Taghi Ahmadi, and R. Ismail, J. Appl. Phys. 0021-8979 105, 074503 (2009). 10.1063/1.3091278
40. M. T. Ahmadi, R. Ismail, M. L. P. Tan, and V. K. Arora, J. Nanomater. 2008, 769250 (2008). 10.1155/2008/769250
41. K. Natori, IEEE Trans. Electron Devices 0018-9383 55, 2877 (2008). 10.1109/TED.2008.2008009
42. R. S. Wang, H. W. Liu, R. Huang, J. Zhuge, L. L. Zhang, D. W. Kim, X. Zhang, D. Park, and Y. Y. Wang, IEEE Trans. Electron Devices 0018-9383 55, 2960 (2008). 10.1109/TED.2008.2005152
43. M. Büttiker, Phys. Rev. B 0556-2805 33, 3020 (1986). 10.1103/PhysRevB.33.3020
44. G. Mugnaini and G. Iannaccone, IEEE Trans. Electron Devices 0018-9383 52, 1802 (2005). 10.1109/TED.2005.851831 (Pubitemid 41100643)
45. G. Mugnaini and G. Iannaccone, IEEE Trans. Electron Devices 0018-9383 52, 1795 (2005). 10.1109/TED.2005.851827 (Pubitemid 41100642)