Low-dimensional carrier statistics in nanostructures

Current Nanoscience

Volumn 7, Issue 2, 2011, Pages 235-239

  Qindeel, Rabia ^a,b   Riyadi, Munawar A ^b,c   Ahmadi, Mohammad Taghi ^b   Arora, Vijay K ^b,d  

^a Advanced Photonic Science Institute   (Malaysia)

^b UNIVERSITI TEKNOLOGI MALAYSIA   (Malaysia)

^c DIPONEGORO UNIVERSITY   (Indonesia)

^d WILKES UNIVERSITY   (United States)

Author keywords

2D nanosheet; ID nanowire; Intrinsic velocity; Nanoelectronic transport; Quantum emission; Saturation velocity

Indexed keywords

2D NANOSHEET; ID NANOWIRE; INTRINSIC VELOCITY; QUANTUM EMISSION; SATURATION VELOCITY;

ELECTRIC FIELDS; ELECTRIC WIRE; NANOELECTRONICS; NANOSHEETS; NANOWIRES; PROBABILITY DISTRIBUTIONS; QUANTUM CHEMISTRY; VELOCITY;

CARRIER CONCENTRATION;

NANOMATERIAL;

ARTICLE; CONCENTRATION (PARAMETERS); ELECTRIC FIELD; ENERGY; ENVIRONMENTAL TEMPERATURE; PRIORITY JOURNAL; VELOCITY;

EID: 79951712764     PISSN: 15734137     EISSN: None     Source Type: Journal    
DOI: 10.2174/157341311794653631     Document Type: Article

References (18)

1. Arora, V. K. Theory of scattering-limited and ballistic mobility andsaturation velocity in low-dimensional nanostructures. Curr. Nanosci., 2009,5(2), 227-231.
2. Riyadi, M. A.; Ahmadi, M. T.; Suseno, J. E.; Siew, K. E.; Saad, I.; Ismail, R.; Arora, V. K. In: Physics-Based Simulation of Carrier Velocity in 2-Dimensional P-Type MOSFET, 3rd Asia International Conference onModelling & Simulation (AMS2009), Bandung-Bali, Indonesia, 2009; pp.735-738.
3. Ahmadi, M. T.; Tan, M. L. P.; Ismail, R.; Arora, V. K. The high-field driftvelocity in degenerately-doped silicon nanowires. Int. J. Nanotechnol., 2009,6(7-8), 601-617.
4. Fang, T.; Konar, A.; Xing, H. L.; Jena, D. Carrier statistics and quantumcapacitance of graphene sheets and ribbons. Appl. Phys. Lett., 2007, 91(9), 092109.
5. Neophytou, N.; Guo, J.; Lundstrom, M. S. Three-dimensional electrostaticeffects of carbon nanotube transistors. IEEE Trans. Nanotechnol., 2006, 5(4),385-392.
6. Engstrom, O.; Landsberg, P. T. Charge-carrier statistics at InAs/GaAsquantum dots. Phys. Rev. B, 2005, 72(7), 075360.
7. Tsendin, K. D. Charge carrier statistics of disordered semiconductors withnegative-u defects and electrically active impurity atoms. J. Non-Cryst.Solids, 1989, 114, 118-120.
8. Glazman, L. I. Carrier statistics and conductivity of a para-typesemiconductor with dislocations. Soviet Phys. Semiconduct.-Ussr, 1985,19(10), 1076-1079.
9. Kelly, M. J. Carrier statistics and the low-temperature mobility ofsemiconductor super-lattices. J. Phys. C Solid State Phys., 1983, 16(32),1165-1168.
10. Ghatak, K. P.; Chakravarti, A. N. Carrier statistics in super-lattices of smallgapsemiconductors in the presence of a quantizing magnetic-field. Phys.Status Solidi B-Basic Res., 1983, 117(2), 707-715.
11. Chakravarti, A. N.; Ghatak, K. P.; Rao, G. B.; Ghosh, K. K. Carrier statisticsin zero-gap semiconductors in the presence of a quantizing magnetic-field.Phys. Status Solidi B-Basic Res., 1982, 112(1), 75-81.
12. Hoffmann, H. J. Charge carrier statistics of semiconductors containingdefects with negative electronic correlation-energy. Appl. Phys. A Mater. Sci.Process., 1982, 27(1), 39-47.
13. Shik, A. Y. Carrier statistics and thermal relaxations in inhomogeneoussemiconductors. Zh. Eksp. Teor. Fiz., 1976, 71(9), 1159-1165.
14. Chek, D. C. Y.; Ahmadi, M. T.; Tan, M. L. P.; Ismail, R.; Arora, V. K. In:Band Structure Effects on the Carbon Nanotube Carrier Statistics, MASSRegional Conference on Solid State Science and Technology (RCSSST2008), Port Dickson, Nov 30 - Dec 2, 2008.
15. Lundstrom, M.; Guo, J. Nanoscale Transistor: Device Physics, Modeling andSimulation: Springer, New York, NY, 2006.
16. Arora, V. K. In: Ballistic quantum transport in nano devices and circuits,2nd IEEE International Nanoelectronics Conference (INEC 2008), Shanghai,China, 2008; pp. 573-578.
17. Arora, V.K.; Chek, D.C.Y.; Tan, M.L.P.; Hashim, M. Transition ofequilibrium stochastic to unidirectional velocity vectors in a nanowiresubjected to a towering electric field. J. Appl. Phys., 2010, 108, 114314-114314-8.
18. Tan, M. L. P.; Saad, I.; Ismail, R.; Arora, V. K. Enhancement of nano-RCswitching delay due to the resistance blow-up in InGaAs. NANO, 2007, 2(4),233.