Temperature dependence of the transconductance in ballistic III-V QWFETs

IEEE Transactions on Electron Devices

Volumn 58, Issue 6, 2011, Pages 1804-1808

  Liu, Yang ^a   Luisier, Mathieu ^b   Lundstrom, Mark S ^b  

^a IBM RESEARCH   (United States)

^b Purdue University   (United States)

Author keywords

Ballistic transport; high electron mobility transistors (HEMTs); injection velocity; metal oxide semiconductor field effect transistors (MOSFETs); quantum confinement; transconductance

Indexed keywords

BALLISTIC DEVICES; BALLISTIC TRANSPORTS; ELECTRON PHONON SCATTERING; EXPERIMENTAL CHARACTERISTICS; INJECTION VELOCITY; INTRINSIC PROPERTY; METAL-OXIDE-SEMICONDUCTOR FIELD-EFFECT TRANSISTORS (MOSFETS); QUANTUM WELL FIELD-EFFECT TRANSISTORS; SERIES RESISTANCES; TEMPERATURE BEHAVIOR; TEMPERATURE DEPENDENCE; TEMPERATURE DEPENDENT;

BALLISTICS; ELECTRON MOBILITY; HIGH ELECTRON MOBILITY TRANSISTORS; MOSFET DEVICES; PHONONS; TEMPERATURE DISTRIBUTION; TRANSISTORS; TRANSPORT PROPERTIES; VANADIUM;

TRANSCONDUCTANCE;

EID: 79957653356     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2129520     Document Type: Article

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