Impact of the twin-gate structure on the linear kink effect in PD SOI nMOSFETS

Microelectronics Journal

Volumn 37, Issue 8, 2006, Pages 681-685

  Agopian, Paula Ghedini Der ^a   Martino, João Antonio ^a,b   Simoen, Eddy ^c   Claeys, Cor ^c,d  

^a UNIVERSITY OF SÃO PAULO   (Brazil)

^b CENTRO UNIVERSITÁRIO DA FEI   (Brazil)

^c IMEC   (Belgium)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Linear kink effect; Series resistance; Silicon on insulator; Tunneling currents; Twin gate structure; Ultra thin gate oxides

Indexed keywords

CARRIER MOBILITY; COMPUTER SIMULATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; SILICON; TRANSISTORS;

LINEAR KINK EFFECT; SERIES RESISTANCE; SILICON-ON-INSULATOR; TUNNELING CURRENTS; TWIN-GATE STRUCTURE; ULTRA-THIN GATE OXIDES;

MOSFET DEVICES;

EID: 33746861172     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mejo.2005.12.003     Document Type: Article

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