An analysis on the ambipolar current in Si double-gate tunnel FETs

Solid-State Electronics

Volumn 70, Issue , 2012, Pages 67-72

  Hraziia, ^a   Vladimirescu, Andrei ^a   Amara, Amara ^a   Anghel, Costin ^a  

^a Institut Superieur d'Electronique de Paris ISEP   (France)

Author keywords

Ambipolar current; Scaling; TFET; Top and bottom contacts; Tunnel FET

Indexed keywords

AMBIPOLAR; BOTTOM CONTACTS; DESIGN PARAMETERS; DOUBLE-GATE; FIELD DISTRIBUTION; GATE VOLTAGES; NUMERICAL DEVICE SIMULATION; SCALING; TFET; TUNNEL FET; TUNNEL FIELD EFFECT TRANSISTOR;

MESFET DEVICES; SILICON;

DRAIN CURRENT;

EID: 84858070770     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2011.11.009     Document Type: Conference Paper

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