Device physics and design of double-gate tunneling field-effect transistor by silicon film thickness optimization

Applied Physics Letters

Volumn 90, Issue 26, 2007, Pages

  Toh, Eng Huat ^a   Wang, Grace Huiqi ^a   Samudra, Ganesh ^a   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; DRAIN CURRENT; ELECTRON TUNNELING; FILM THICKNESS; SEMICONDUCTING SILICON; THIN FILMS;

BAND-TO-BAND TUNNELING; DEVICE PHYSICS; SILICON FILMS;

FIELD EFFECT TRANSISTORS;

EID: 34547366803     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2748366     Document Type: Article

References (10)

1. P.-F. Wang, K. Hilsenbeck, Th. Nirschl, M. Oswald, Ch. Stepper, M. Weis, D. Schmitt-Landsiedel, and W. Hansch, Solid-State Electron. 48, 2281 (2004).
2. Th. Nirschl, P.-F. Wang, C. Weber, J. Sedlmeir, R. Heinrich, R. Kakoschke, K. Schrüfer, J. Holz, C. Pacha, T. Schulz, M. Ostermayr, A. Olbrich, G. Georgakos, E. Ruderer, and W. Hansch, Tech. Dig. - Int. Electron Devices Meet. 2004, 195.
3. K. K. Bhuwalka, J. Schulze, and I. Eisele, Proceedings of the Devices Research Conference, 2004, p. 215.
4. K. K. Bhuwalka, J. Schulze, and I. Eisele, IEEE Trans. Electron Devices 52, 1541 (2005).
5. Q. Zhang, W. Zhao, and A. Seabaugh, IEEE Electron Device Lett. 27, 297 (2006).
6. E. O. Kane, J. Phys. Chem. Solids 12, 181 (1959).
7. T.-Y. Liow, K.-M. Tan, H.-C. Chin, R. T. P. Lee, C.-H. Tung, G. S. Samudra, N. Balasubramanian, and Y.-C. Yeo, Tech. Dig. - Int. Electron Devices Meet. 2006, 473.
8. E.-H. Toh, G. H. Wang, L. Chan, G.-Q. Lo, G. S. Samudra, and Y.-C. Yeo, IEEE Electron Device Lett. 27, 975 (2006).
9. E.-H. Toh, G. H. Wang, G.-Q. Lo, L. Chan, G. Samudra, and Y.-C. Yeo, Appl. Phys. Lett. 90, 023505 (2007).
10. International Technoogy Roadmap for Semiconductor (http://www.itrs.net/).