High temperature annealing of n-type 4H-SiC: Impact on intrinsic defects and carrier lifetime

Journal of Applied Physics

Volumn 111, Issue 3, 2012, Pages

  Zippelius, Bernd ^a   Suda, Jun ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

4H SILICON CARBIDE; A-MONOTONE; ANNEALING TEMPERATURES; C/SI RATIO; DEFECT CONCENTRATIONS; GROWTH CONDITIONS; HIGH TEMPERATURE; HIGH-TEMPERATURE ANNEALING; INITIAL CONCENTRATION; INITIAL DEFECTS; INITIAL VALUES; INTRINSIC DEFECTS; NITROGEN-DOPED; PHOTOCONDUCTANCE; TEMPERATURE RANGE;

ANNEALING; CARRIER LIFETIME; CONCENTRATION (PROCESS); DEEP LEVEL TRANSIENT SPECTROSCOPY; SILICON CARBIDE;

DEFECTS;

EID: 84857423425     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3681806     Document Type: Article

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