Impacts of recombination at the surface and in the substrate on carrier lifetimes of n-type 4H-SiC epilayers

Journal of Applied Physics

Volumn 108, Issue 8, 2010, Pages

  Kimoto, Tsunenobu ^a   Hiyoshi, Toru ^a   Hayashi, Toshihiko ^a   Suda, Jun ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ACCURATE MEASUREMENT; BULK LIFETIME; CARRIER RECOMBINATION; DECAY CURVES; DIFFUSION EQUATIONS; INITIAL STAGES; NUMERICAL SIMULATION; SIC EPILAYERS; THERMAL OXIDATION; THERMAL TREATMENT;

EPILAYERS; EPITAXIAL GROWTH; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES;

CARRIER LIFETIME;

EID: 78149451869     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3498818     Document Type: Article

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