Theoretical study of vacancy diffusion and vacancy-assisted clustering of antisites in SiC

Physical Review B - Condensed Matter and Materials Physics

Volumn 68, Issue 15, 2003, Pages

  Rauls, E ^a   Frauenheim, Th ^a   Gali, A ^b   Deak P ^b  

^a UNIVERSITY OF PADERBORN   (Germany)

^b BUDAPEST UNIVERSITY OF TECHNOLOGY AND ECONOMICS   (Hungary)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON; SILICON CARBIDE;

ARTICLE; COMPLEX FORMATION; CONCENTRATION (PARAMETERS); DIFFUSION; ENTROPY; HIGH TEMPERATURE; IRRADIATION; LOW TEMPERATURE; THEORETICAL STUDY;

EID: 0345305435     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.68.155208     Document Type: Article

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