Impacts of growth parameters on deep levels in n -type 4H-SiC

Journal of Applied Physics

Volumn 101, Issue 5, 2007, Pages

  Danno, Katsunori ^a   Hori, Tsutomu ^a,b   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

^b HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; CRYSTAL GROWTH; DEEP LEVEL TRANSIENT SPECTROSCOPY; EPILAYERS; GROWTH RATE; GROWTH TEMPERATURE;

CARBON VACANCY; EPILAYERS GROWTH;

SILICON CARBIDE;

EID: 33947320770     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2437666     Document Type: Article

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