Enhanced annealing of the Z12 defect in 4H-SiC epilayers

Journal of Applied Physics

Volumn 103, Issue 1, 2008, Pages

  Storasta, Liutauras ^a   Tsuchida, Hidekazu ^a   Miyazawa, Tetsuya ^a   Ohshima, Takeshi ^b  

^a CENTRAL RESEARCH INSTITUTE OF ELECTRIC POWER INDUSTRY   (Japan)

^b JAPAN ATOMIC ENERGY AGENCY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARRIER CONCENTRATION; ELECTRON TRAPS; EPILAYERS; ION IMPLANTATION;

ANNEALING TEMPERATURES; CARRIER TRAP CONCENTRATION;

SILICON CARBIDE;

EID: 38149122292     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2829776     Document Type: Article

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