Investigation of deep levels in n -type 4H-SiC epilayers irradiated with low-energy electrons

Journal of Applied Physics

Volumn 100, Issue 11, 2006, Pages

  Danno, Katsunori ^a   Kimoto, Tsunenobu ^a  

^a KYOTO UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CARBON; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRON ENERGY LEVELS; IRRADIATION;

CARBON VACANCY; DEEP LEVELS; ELECTRON FLUENCE; EPILAYERS;

SILICON CARBIDE;

EID: 33845725251     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2401658     Document Type: Article

References (31)

1. M. Bhatnagar and B. J. Baliga, IEEE Trans. Electron Devices 0018-9383 10.1109/16.199372 40, 645 (1993).
2. H. Lendenmann, F. Dahlquist, J. P. Bergman, H. Bleichner, and C. Hallin, Mater. Sci. Forum 389-393, 1259 (2002).
3. Y. Sugawara, D. Takayama, K. Asano, A. Agarwal, S. Ryu, J. Palmour, and S. Ogata, Proceedings of the International Symposium on Power Semiconductor Devices & ICs 2004, Kitakyusyu, 2004, pp. 365-368.
4. B. J. Baliga and E. Sun, IEEE Trans. Electron Devices 24, 685 (1977).
5. R. O. Carlson, Y. S. Sun, and H. B. Assalit, IEEE Trans. Electron Devices 24, 1103 (1977).
6. C. Hemmingsson, N. T. Son, O. Kordina, J. P. Bergman, E. Janźn, J. L. Lindström, S. Savage, and N. Nordell, J. Appl. Phys. 0021-8979 10.1063/1.364397 81, 6155 (1997).
7. G. Alfieri, E. V. Monakhov, and B. G. Svensson, Mater. Sci. Forum 457-460, 481 (2004).
8. L. Storasta, J. P. Bergman, E. Janźn, A. Henry, and J. Lu, J. Appl. Phys. 0021-8979 10.1063/1.1778819 96, 4909 (2004).
9. D. V. Lang, J. Appl. Phys. 0021-8979 10.1063/1.1663719 45, 3023 (1974).
10. H. J. von Bardeleben, J. L. Cantin, L. Henry, and M. F. Barthe, Phys. Rev. B 0163-1829 10.1103/PhysRevB.62.10841 62, 10841 (2000).
11. T. Dalibor, G. Pensl, H. Matsunami, T. Kimoto, W. J. Choyke, A. Schöner, and N. Nordell, Phys. Status Solidi A 162, 199 (1997).
12. T. Kimoto, S. Nakazawa, K. Hashimoto, and H. Matsunami, Appl. Phys. Lett. 0003-6951 10.1063/1.1413724 79, 2761 (2001).
13. S. Weiss and R. Kassing, Solid-State Electron. 0038-1101 10.1016/0038-1101(88)90071-8 31, 1733 (1988).
14. S. D. Brotherton, Solid-State Electron. 26, 987 (1983).
15. C. G. Hemmingsson, N. T. Son, A. Ellison, J. Zhang, and E. Janźn, Phys. Rev. B 0163-1829 10.1103/PhysRevB.58.R10119 58, R10119 (1998).
16. G. D. Watkins and J. R. Troxell, Phys. Rev. Lett. 0031-9007 10.1103/PhysRevLett.44.593 44, 593 (1980).
17. Y. Negoro, T. Kimoto, and H. Matsunami, Appl. Phys. Lett. 0003-6951 10.1063/1.1790032 85, 1716 (2004).
18. G. Alfieri, E. V. Monakhov, B. G. Svensson, and M. K. Linnarsson, J. Appl. Phys. 0021-8979 10.1063/1.2009816 98, 043518 (2005).
19. H. Ryssel and I. Ruge, Ion Implantation (Wiley, New York, 1986).
20. W. Sullivan and J. W. Steeds, Mater. Sci. Forum 527-529, 481 (2006).
21. M. Bockstedte, A. Mattausch, and O. Pankratov, in Silicon Carbide, Recent Major Advances, edited by, W. J. Choyke, H. Matsunami, and, G. Pensl, (Springer, Berlin, 2003), pp. 27-55.
22. F. Gao, W. J. Weber, M. Posselt, and V. Belko, Mater. Sci. Forum 457-460, 457 (2004).
23. K. Fujihira, T. Kimoto, and H. Matsunami, J. Cryst. Growth 0022-0248 10.1016/S0022-0248(03)01245-4 255, 136 (2003).
24. T. Kimoto, K. Hashimoto, and H. Matsunami, Jpn. J. Appl. Phys., Part 1 42, 7294 (2003).
25. C. W. Litton, D. Johnstone, S. Akarca-Biyikli, K. S. Ramaiah, I. Bhat, T. P. Chow, J. K. Kim, and E. F. Schubert, Appl. Phys. Lett. 0003-6951 10.1063/1.2161388 88, 121914 (2006).
26. I. Pintilie, L. Pintilie, and K. Irmscher, Appl. Phys. Lett. 0003-6951 10.1063/1.1529314 81, 4841 (2002).
27. B. G. Svensson and M. Willander, J. Appl. Phys. 0021-8979 10.1063/1.339403 62, 2758 (1987).
28. A. Zywietz, J. Furthmüller, and F. Bechstedt, Phys. Rev. B 0163-1829 10.1103/PhysRevB.59.15166 59, 15166 (1999).
29. L. Torpo, M. Marlo, T. E. M. Staab, and R. M. Nieminen, J. Phys.: Condens. Matter 13, 6203 (2001).
30. N. T. Son, B. Magnusson, and E. Janźn, Appl. Phys. Lett. 0003-6951 10.1063/1.1522822 81, 3945 (2002).
31. T. Umeda, Y. Ishitsuka, J. Isoya, N. T. Son, E. Janźn, N. Morishima, T. Ohshima, H. Itoh, and A. Gali, Phys. Rev. B 0163-1829 10.1103/PhysRevB.71.193202 71, 193202 (2005).