메뉴 건너뛰기




Volumn 79, Issue 11, 2009, Pages

Static and dynamic properties of hydrogenated amorphous silicon with voids

Author keywords

[No Author keywords available]

Indexed keywords


EID: 65149083092     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.79.115214     Document Type: Article
Times cited : (22)

References (41)
  • 1
    • 0000598639 scopus 로고    scopus 로고
    • 10.1103/PhysRevLett.80.1928
    • J. Dong and D. A. Drabold, Phys. Rev. Lett. 80, 1928 (1998). 10.1103/PhysRevLett.80.1928
    • (1998) Phys. Rev. Lett. , vol.80 , pp. 1928
    • Dong, J.1    Drabold, D.A.2
  • 5
    • 65149091259 scopus 로고    scopus 로고
    • Ph.D. thesis, University of Illionis at Urbana-Champaign
    • P. M. Voyles, Ph.D. thesis, University of Illionis at Urbana-Champaign, 2001
    • (2001)
    • Voyles, P.M.1
  • 14
    • 0001625934 scopus 로고
    • 10.1103/PhysRevB.26.3605
    • W. E. Carlos and P. C. Taylor, Phys. Rev. B 26, 3605 (1982). 10.1103/PhysRevB.26.3605
    • (1982) Phys. Rev. B , vol.26 , pp. 3605
    • Carlos, W.E.1    Taylor, P.C.2
  • 17
    • 0026138277 scopus 로고
    • 10.1016/0921-4526(91)90111-Q
    • W. Beyer, Physica B 170, 105 (1991). 10.1016/0921-4526(91)90111-Q
    • (1991) Physica B , vol.170 , pp. 105
    • Beyer, W.1
  • 27
    • 0001152889 scopus 로고
    • 10.1103/PhysRevB.49.4579
    • C. G. Van de Walle, Phys. Rev. B 49, 4579 (1994). 10.1103/PhysRevB.49. 4579
    • (1994) Phys. Rev. B , vol.49 , pp. 4579
    • Van De Walle, C.G.1
  • 30
  • 37
  • 41
    • 65149089709 scopus 로고    scopus 로고
    • Obviously, for a full treatment, the molecular formation probability depends upon the atomic velocities and environment.
    • Obviously, for a full treatment, the molecular formation probability depends upon the atomic velocities and environment.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.