Monitoring of crystallization and the effect of the deposition rate, hydrogen content and annealing process on the crystallization of hot wire chemical vapor deposited hydrogenated amorphous silicon (a-Si:H) films

Thin Solid Films

Volumn 516, Issue 18, 2008, Pages 6517-6523

  Roy, B ^a   Mahan, A H ^b   Wang, Q ^b   Reedy, R ^b   Readey, D W ^a   Ginley, D S ^b  

^a Department of Metallurgical and Materials Engineering   (United States)

^b NATIONAL RENEWABLE ENERGY LABORATORY   (United States)

Author keywords

a Si:H; CTA; Deposition rate; HWCVD; Hydrogen content of films; RTA

Indexed keywords

AMORPHOUS SILICON; CHEMICAL VAPOR DEPOSITION; CRYSTALLIZATION; FULL WIDTH AT HALF MAXIMUM; REACTION RATES; SURFACE MORPHOLOGY;

DEPOSITION RATE; HOT WIRE CHEMICAL VAPOR DEPOSITION (HWCVD); HYDROGEN CONTENT;

AMORPHOUS FILMS;

EID: 44649146395     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2008.03.003     Document Type: Article

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