Optical properties of re-crystallized polycrystalline silicon thin films from a-Si films deposited by electron beam evaporation

Journal of Electrical Engineering

Volumn 60, Issue 5, 2009, Pages 279-282

  Netrvalová, Marie ^a   Vavruňková, Veronika ^a   Müllerová, Jarmila ^b   Šutta, Pavol ^a  

^a UNIVERSITY OF WEST BOHEMIA   (Czech Republic)

^b UNIVERSITY OF ILINA   (Slovakia)

Author keywords

a Si thin films; Annealing; Optical properties; References

Indexed keywords

EID: 70350349109     PISSN: 13353632     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (4)

1. ZUTPHEN, VAN A. J. M. M.-ŠUTTA, P.-TICHELAAR, F. D.-KEITZ, VON A.-ZEMAN, M.-METSELAAR, J. W.: Structure of Thin Polycrystalline Silicon Films on Ceramic Substrates, Journal of Crystal Growth 223 (2001), 332.
2. LANGFORD, J. I.: A Rapid Method for Analyzing the Breadths of Diffraction and Spectral Lines using the Voigt Function, J. Appl. Cryst. 11 (1978), 10.
3. MÜLLEROVÁ, J.: Spectrometry of Thin Films (Spektrofotometria tenkých vrstiev), Pobočka slovenskej elektrotechnickej spoločnosti pri VA, Liptovská Mikuláš, 2004. (in SLovak)
4. MÜLLEROVÁ, J.-VAVRUŇKOVÁ, V.-ŠUTTA, P.: Optical Absorption of PE CVD Deposited Thin Hydrogenated Silicon in Light of Ordering Effects, Cent. Eur. J. Phys. 7 No. 2 (2009),315.